Apparatus including memory system controllers and related methods

ABSTRACT

Memory system controllers can include a switch and non-volatile memory control circuitry coupled to the switch. The non-volatile memory control circuitry can include a channel control circuit coupled to logical units. The channel control circuitry can be configured to relay an erase command to a first one of the logical units and relay a particular command from the switch to a second one of the logical units while the erase command is being executed on the first one of the plurality of logical units.

TECHNICAL FIELD

The present disclosure relates generally to apparatus, such assemiconductor memory devices, systems, and controllers, and relatedmethods, and more particularly, to memory system controllers, forexample.

BACKGROUND

Memory devices are typically provided as internal, semiconductor,integrated circuits in computers or other electronic devices. There aremany different types of memory including volatile and non-volatilememory. Volatile memory can require power to maintain its information,e.g., data, and includes random-access memory (RAM), dynamic randomaccess memory (DRAM), synchronous dynamic random access memory (SDRAM),and static random access memory (SRAM) among others. Non-volatile memorycan provide persistent information by retaining stored information whennot powered and can include NAND flash memory, NOR flash memory, readonly memory (ROM), Electrically Erasable Programmable ROM (EEPROM),Erasable Programmable ROM (EPROM), and phase change random access memory(PCRAM), among others.

Memory devices can be combined together to form a solid state drive(SSD). A solid state drive can include non-volatile memory, e.g., NANDflash memory and NOR flash memory, and/or can include volatile memory,e.g., DRAM and SRAM, among various other types of non-volatile andvolatile memory. Flash memory devices, including floating gate flashdevices and charge trap flash (CTF) devices usingsemiconductor-oxide-nitride-oxide-semiconductor andmetal-oxide-nitride-oxide-semiconductor capacitor structures that storeinformation in charge traps in the nitride layer, may be utilized asnon-volatile memory for a wide range of electronic applications. Flashmemory devices typically use a one-transistor memory cell that allowsfor high memory densities, high reliability, and low power consumption.

An SSD can be used to replace hard disk drives as the main storagedevice for a computing system, as the solid state drive can haveadvantages over hard drives in terms of performance, size, weight,ruggedness, operating temperature range, and power consumption. Forexample, SSDs can have superior performance when compared to magneticdisk drives due to their lack of moving parts, which may avoid seektime, latency, and other electro-mechanical delays associated withmagnetic disk drives. SSD manufacturers can use non-volatile flashmemory to create flash SSDs that may not use an internal battery supply,thus allowing the drive to be more versatile and compact.

An SSD can include a number of memory devices, e.g., a number of memorychips (as used herein, “a number of” something can refer to one or moreof such things, e.g., a number of memory devices can refer to one ormore memory devices). As one of ordinary skill in the art willappreciate, a memory chip can include a number of dies and/or logicalunits (LUNs), e.g., where a LUN can be one or more die. Each die caninclude a number of memory arrays and peripheral circuitry thereon. Thememory arrays can include a number of memory cells organized into anumber of physical pages, and the physical pages can be organized into anumber of blocks. An array of flash memory cells can be programmed apage at a time and erased a block at a time. SSD controllers may use anembedded processor to perform memory management and allocation.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a functional block diagram of a computing system including atleast one memory system in accordance with a number of embodiments ofthe present disclosure.

FIG. 2 is a functional block diagram of a memory system in accordancewith a number of embodiments of the present disclosure.

FIG. 3A is a functional block diagram of a transport layer interfacebetween a host bus adapter (HBA) and a serial attachment (SA)programming compliant device in accordance with a number of embodimentsof the present disclosure.

FIG. 3B is a functional block diagram of an HBA and an SA programmingcompliant device in accordance with a number of embodiments of thepresent disclosure.

FIG. 4 illustrates a functional block diagram of a block managementdevice in accordance with a number of embodiments of the presentdisclosure.

DETAILED DESCRIPTION

The present disclosure includes memory system controllers. Memory systemcontrollers can include a switch and non-volatile memory controlcircuitry coupled to the switch. The non-volatile memory controlcircuitry can include a channel control circuit coupled to logicalunits. The channel control circuitry can be configured to relay an erasecommand to a first one of the logical units and relay a particularcommand from the switch to a second one of the logical units while theerase command is being executed on the first one of the plurality oflogical units.

In the following detailed description of the present disclosure,reference is made to the accompanying drawings that form a part hereof,and in which is shown by way of illustration how a number of embodimentsof the disclosure may be practiced. These embodiments are described insufficient detail to enable those of ordinary skill in the art topractice the embodiments of this disclosure, and it is to be understoodthat other embodiments may be utilized and that process, electrical,and/or structural changes may be made without departing from the scopeof the present disclosure. As used herein, the designator “N,”particularly with respect to reference numerals in the drawings,indicates that a number of the particular feature so designated can beincluded with a number of embodiments of the present disclosure.

The figures herein follow a numbering convention in which the firstdigit or digits correspond to the drawing figure number and theremaining digits identify an element or component in the drawing.Similar elements or components between different figures may beidentified by the use of similar digits. For example, 108 may referenceelement “08” in FIG. 1, and a similar element may be referenced as 208in FIG. 2. As will be appreciated, elements shown in the variousembodiments herein can be added, exchanged, and/or eliminated so as toprovide a number of additional embodiments of the present disclosure. Inaddition, as will be appreciated, the proportion and the relative scaleof the elements provided in the figures are intended to illustrate theembodiments of the present invention, and should not be taken in alimiting sense.

FIG. 1 is a functional block diagram of a computing system 100 includingat least one memory system 104 in accordance with a number ofembodiments of the present disclosure. In the embodiment illustrated inFIG. 1, the memory system 104, e.g., a solid state drive (SSD), caninclude a physical host interface 106, a memory system controller 108,e.g., an SSD controller, and a number of solid state memory devices110-1, . . . , 110-N. The solid state memory devices 110-1, . . . ,110-N can provide a storage volume for the memory system. In a number ofembodiments, the solid state memory system controller 108 can be anapplication specific integrated circuit (ASIC), where the controller108, e.g., in the form of an ASIC, is coupled to a printed circuit boardincluding the physical interface 106 and solid state memory devices110-1, . . . , 110-N.

As illustrated in FIG. 1, the memory system controller 108, e.g., asolid state memory system controller, can be coupled to the physicalhost interface 106 and to the solid state memory devices 110-1, . . . ,110-N. The physical host interface 106 can be used to communicateinformation between the memory system 104 and another device such as ahost 102. Host 102 can include a memory access device, e.g., aprocessor. One of ordinary skill in the art will appreciate that “aprocessor” can intend a number of processors, such as a parallelprocessing system, a number of coprocessors, etc. Example hosts includelaptop computers, personal computers, digital cameras, digital recordingand playback devices, mobile telephones, PDAs, memory card readers,interface hubs, and the like. For a number of embodiments, the physicalhost interface 106 can be in the form of a standardized physicalinterface. For example, when the memory system 104 is used forinformation storage in a computing system 100, the physical hostinterface 106 can be a serial advanced technology attachment (SATA)physical interface, a peripheral component interconnect express (PCIe)physical interface, a small computer system interface (SCSI) interface,a serial attachment SCSI (SAS) interface, or a universal serial bus(USB) physical interface, among other interfaces. In general, however,the physical host interface 106 can provide an interface for passingcontrol, address, information, e.g., data, and other signals between thememory system 104 and a host 102 having compatible receptors for thephysical host interface 106.

The solid state memory system controller 108 can communicate with thesolid state memory devices 110-1, . . . , 110-N to read, write, anderase information, among other operations. The solid state memory systemcontroller 108 can have firmware and/or circuitry that may be a numberof integrated circuits and/or discrete components. For a number ofembodiments, the circuitry in solid state memory system controller 108may include control circuitry for controlling access across the solidstate memory devices 110-1, . . . , 110-N and circuitry for providing atranslation layer between a host 102 and the memory system 104. Thus, amemory controller could selectively couple an I/O connection (not shownin FIG. 1) of a solid state memory device 110-1, . . . , 110-N toreceive the appropriate signal at the appropriate 110 connection at theappropriate time. Similarly, the communication protocol between a host102 and the memory system 104 may be different than what is required foraccess of a solid state memory device 110-1, . . . , 110-N. Solid statememory system controller 108 could then translate the commands receivedfrom the host 102 into the appropriate commands to achieve the desiredaccess to a solid state memory device 110-1, . . . , 110-N.

A solid state memory device 110-1, . . . , 110-N can include a number ofarrays of memory cells, e.g., non-volatile memory cells. The arrays canbe flash arrays with a NAND architecture, for example. In a NANDarchitecture, the control gates of memory cells of a “row” can becoupled with an access, e.g., word, line, while the memory cells can becoupled in series source to drain in a “string” between a select gatesource transistor and a select gate drain transistor. The string can beconnected to a data, e.g., bit, line by the select gate draintransistor. The use of the terms “row” and “string” implies neither alinear nor an orthogonal arrangement of memory cells. As will beappreciated by those of ordinary skill in the art, the manner ofconnection of the memory cells to the bit lines and source lines dependson whether the array is a NAND architecture, a NOR architecture, or someother memory array architecture.

The solid state memory devices 110-1, . . . , 110-N can include a numberof memory cells that can be grouped. As used herein, a group can includea number of memory cells, such as a page, block, plane, die, an entirearray, or other groups of memory cells. For example, some memory arrayscan include a number of pages of memory cells that make up a block ofmemory cells. A number of blocks can be included in a plane of memorycells. A number of planes of memory cells can be included one a die. Asan example, a 128 GB memory device can include 4320 bytes of informationper page, 128 pages per block, 2048 blocks per plane, and 16 planes perdevice.

The memory system 104 can implement wear leveling, e.g., garbagecollection and/or reclamation, to control the wear rate on the solidstate memory devices 110-1, . . . , 110-N. A solid state memory arraycan experience errors, e.g., failures, after a number of program and/orerase cycles. Wear leveling can reduce the number of program and/orerase cycles performed on a particular group by spreading the cyclesmore evenly over the entire array. Wear leveling can include dynamicwear leveling to minimize the amount of valid blocks moved to reclaim ablock. Dynamic wear leveling can include a technique called garbagecollection. Garbage collection can include reclaiming, e.g., erasing andmaking available for writing, blocks that have the most invalid pages,e.g., according to a “greedy algorithm.” Alternatively, garbagecollection can include reclaiming blocks with more than a thresholdamount of invalid pages. If sufficient free blocks exist for a writingoperation, then a garbage collection operation may not occur. An invalidpage, for example, can be a page of information that has been updated toa different page. Static wear leveling includes writing staticinformation to blocks that have high erase counts to prolong the life ofthe block.

Write amplification is a process that may occur when writing informationto solid state memory devices 110-1, . . . , 110-N. When randomlywriting information in a memory array, the solid state memory systemcontroller 108 scans for available space in the array. Available spacein a memory array can be individual cells, pages, and/or blocks ofmemory cells that are not storing information and/or have been erased.If there is enough available space to write the information in aselected location, then the information is written to the selectedlocation of the memory array. If there is not enough available space inthe selected location, the information in the memory array is rearrangedby reading, copying, moving, or otherwise rewriting and erasing theinformation that is already present in the selected location to a newlocation, leaving available space for the new information that is to bewritten in the selected location. The rearranging of old information inthe memory array is called write amplification because the amount ofwriting performed by the memory device is amplified over an amount ofwriting that would occur if there were sufficient available space in theselected location.

The computing system 100 illustrated in FIG. 1 can include additionalcircuitry beyond what is illustrated. The detail of the computing system100 illustrated in FIG. 1 has been reduced so as not to obscureembodiments of the present disclosure. For example, the memory system104 can include address circuitry to latch address signals provided overI/O connections through I/O circuitry. Address signals can be receivedand decoded by a row decoder and a column decoder to access the solidstate memory devices 110-1, . . . , 110-N. It will be appreciated bythose skilled in the art that the number of address input connectionscan depend on the density and architecture of the solid state memorydevices 110-1, . . . , 110-N.

FIG. 2 is a functional block diagram of a memory system 204 inaccordance with a number of embodiments of the present disclosure. Thememory system 204 can include solid state memory system controller 208.The solid state memory system controller 208 can be coupled to a numberof solid state memory devices, e.g., solid state memory devices 110-1, .. . , 110-N illustrated in FIG. 1. In the example shown in FIG. 2, thenumber of memory devices include non-volatile memory including a numberof logical units (LUNs) 250 and the controller 208 includes volatilememory 212. A LUN 250 can be a portion of non-volatile memory that canbe independently controllable. Memory system 204 and solid state memorysystem controller 208 can be analogous to memory system 104 and solidstate memory system controller 108 respectively, illustrated in FIG. 1.

The solid state memory system controller 208 can include host interface(I/F) circuitry 214 for interfacing with a host, e.g., host 102illustrated in FIG. 1, via physical host interface 206. The solid statememory system controller 208 can include host-memory translationcircuitry 216, memory management circuitry 218, a switch 220,non-volatile memory control circuitry 222, and/or volatile memorycontrol circuitry 224. As described herein, the solid state memorysystem controller 208 can be provided in the form of an ASIC, however,embodiments are not so limited.

The host I/F circuitry 214 can be coupled to host-memory translationcircuitry 216. The host I/F circuitry 214 can be coupled to and/orincorporated with a physical interface to a host, such as physicalinterface 206. The host I/F circuitry 214 can interface with a host,e.g., host 102 in FIG. 1. The host I/F circuitry 214 can include aperipheral component interconnect express (PCIe) circuit 230 providing aphysical layer, link layer, and transport or transaction layerinterface, e.g., where the host is configured to transmit informationaccording to a PCIe standard. A transport layer according to a serialadvanced technology attachment (SATA) standard and/or a serialattachment SCSI (SAS) standard can be analogous to a transaction layeraccording to a PCIe standard. The PCIe circuit 230 can be coupled to ahost bus adapter (HBA) 234, e.g., an advanced host controller interface(AHCI) compatible HBA. The HBA 234 can be coupled to an SA compliantdevice 236, which can be coupled to the host-memory translationcircuitry 216.

In general, the host I/F circuitry 214 is responsible for convertingcommand packets received from the host, e.g., from a PCIe bus, intocommand instructions for the host-memory translation circuitry 216 andfor converting host-memory translation responses into host commands fortransmission to the requesting host. For example, the host I/F circuitry214 can construct SA command packets from PCIe based transaction layerpackets. The HBA 234 and SA compliant device 236 are described in moredetail with respect to FIGS. 3A-3B below.

The host-memory translation circuitry 216 can be coupled to the host I/Fcircuitry 214, to the memory management circuitry 218, and/or to theswitch 220. The host-memory translation circuitry 216 can be configuredto translate host addresses to memory addresses, e.g., addressesassociated with a received command such as a read and/or write command.For example, such translation may be performed by SATA to memorycircuitry 238. Although identified as “SATA to memory” circuitry 238,the circuitry can be configured for other serial attachments such asSAS, as described herein. The host-memory translation circuitry 216might, for example, convert host sector read and write operations tocommands directed to specific LUNs 250. The host-memory translationcircuitry 216 can include error detection/correction circuitry, such asRAID exclusive or (XOR) circuitry 226. The RAID XOR circuitry 226 cancalculate parity information based on information received from the host11F circuitry 214.

The memory management circuitry 218 can be coupled to the host-memorytranslation circuitry 216 and to the switch 220. The memory managementcircuitry 218 can control a number of memory operations including butnot limited to initialization, wear leveling, e.g., garbage collectionand/or reclamation, and/or error detection/correction. While the memorymanagement circuitry 218 can include a processor 228, a number ofembodiments of the present disclosure provide for control of memoryoperations in circuitry, e.g., hardware, without relying on theexecution of instructions, e.g., software and/or firmware, by theprocessor 228. Such embodiments can provide for faster memory operationsrelative to some previous approaches that rely more heavily on aprocessor to control memory operations. Memory management circuitry 218can include block management circuitry 240, which is described in moredetail with respect to FIG. 4.

The switch 220 can be coupled to the host-memory translation circuitry216, the memory management circuitry 218, the non-volatile controlcircuitry 222, and/or the volatile memory control circuitry 224. Theswitch 220 can be a crossbar switch and can include and/or be coupled toa number of buffers. For example, the switch 220 can include internalstatic random access memory (SRAM) buffers (ISBs) 225. The switch can becoupled to a plurality of dynamic random access memory (DRAM) buffers227 included in the volatile memory 212. The switch can include a bufferallocation management (BAM) circuit 221, which can include a buffer tagpool 223. The switch 220 can provide an interface between variouscomponents of the solid state memory system controller 208. The switch220 can account for variations in defined signaling protocols that maybe associated with different components of the solid state memory systemcontroller 208 in order to provide consistent access and implementationbetween components. In a number of embodiments, the switch 220 can be adirect memory access (DMA) module.

The plurality of tags in the buffer tag pool 223 in the BAM circuit 221can each identify a respective one of the plurality of DRAM buffers 227or the plurality of ISBs 225. When a particular tag points to a DRAMbuffer 227, a programmable “BAR” address can be appended to the buffertag to fill out the address for the volatile memory 212. The BAM circuit221 can be configured to allocate a tag to one of a number of hardwaremasters in response to an allocation request from the one of the numberof hardware masters. Hardware masters can include those hardwarecomponents that can access memory.

The BAM circuit 221 can be configured to prioritize allocation of a tagidentifying one of the plurality of ISBs 225 over a tag identifying oneof the plurality of DRAM buffers 227. The ISBs 225 can be faster andlower powered than the DRAM buffers 227, and therefore preferablethereto. Thus, the BAM circuit 221 can be configured to prioritizeallocation of tags such that a tag identifying one of the plurality ofDRAM buffers 227 is allocated only after all tags identifying ISBs 225have been allocated. In a number of embodiments, the solid state memorysystem controller 208 can include 768 DRAM buffers 227 and 256 ISBs 225for a total of 1024 buffers. In such embodiments, the buffer tags can be10-bit tags that identify one of the 1024 buffers. The buffer tag mayhave no particular meaning to the hardware master, but is passed alongby the hardware master during the processing of commands, e.g., readand/or write commands, to allow the correct buffer to be referenced. Thenumber of hardware masters can be configured to request allocation of atag generically without requesting allocation of a tag specific to oneof the plurality of ISBs 225 or one of the plurality of DRAM buffers227. In a number of embodiments, each of the DRAM buffers 227 and theISBs 225 can be of a size equal to a size of the largest supportedmemory page, e.g., 4 KB.

The BAM circuit 221 can be configured to remove tags from the bufferpool 223 that are associated with non-functioning buffers. The processor228 can be configured to access the BAM circuit 221 and remove tags fromthe buffer pool 223 that are associated with non-functioning buffers.Such embodiments can help the solid state memory system controller 208to function properly even if one or more ISBs 225 fail. In someembodiments, the ability to remove, e.g., “map out,” “bad” buffers canbe used in lieu of testing ISBs 225 during manufacturing. The switch 220may be “over-provisioned” with ISBs 225 such that losing a number of theISBs 225 does not does not noticeably affect operation of the solidstate memory system controller 208.

The number of hardware masters can be configured to request allocationof a tag from the BAM circuit 221 in conjunction with a read command ora write command and to request deallocation of an allocated tag from theBAM circuit 221 in conjunction with completion of the read command orthe write command. Hardware masters do not use the same tags formultiple commands and therefore request a new tag for each command. Thehardware masters can be configured to prioritize deallocation requestsover allocation requests, e.g., to help ensure that sufficient buffers,particularly ISBs 225, are available for multiple commands from multiplehardware masters.

The use of buffer tags can facilitate read operations. The hardwaremasters can be configured to send a read command to the non-volatilememory control circuitry 222 along with an allocated tag. Thenon-volatile memory control circuitry 222 can be configured to storeinformation corresponding to the read command in a buffer identified bythe allocated tag and to notify the particular hardware master that sentthe read command that the information is ready.

The use of buffer tags can facilitate write operations. The hardwaremasters can be configured to send a write command to the non-volatilememory control circuitry 222 along with an allocated tag and to storeinformation corresponding to the write command in a buffer identified bythe allocated tag. The non-volatile memory control circuitry 222 can beconfigured to retrieve the information from the buffer identified by theallocated tag, write the information to non-volatile memory, e.g., tothe appropriate LUN 250, and notify the hardware master that sent thewrite command that the information has been written.

The processor 228 in the memory management circuitry 218 can be ahardware master. The processor 228 can be configured to enable directmemory access (DMA) operations between the non-volatile memory controlcircuitry 222 and the volatile memory control circuitry 224 with accessto the entire volatile memory 212 space without regard to the pluralityof tags. Other hardware masters may not enable the DMA feature andtherefore rely on tags for access to buffers rather than directlyaccessing the memory space. The processor 228 can enable DMA operationsvia information in a field used in conjunction with commands sentthrough the command pipeline that bypasses the need for a buffer toaccess memory space. For example, the information “DMA_En BARSEL” can beincluded in a field used with a command, where “DMA_En” indicates to thereceiver that a DMA operation has been enabled, and where “BARSEL”indicates that an address should be included for the DRAM in lieu of abuffer tag, as described herein. Thus, the processor 228 can moveinformation between the volatile memory 212 and the LUNs 250 using thesame logic as buffer-based access for other hardware masters. The“DMA_En” can be echoed to the switch 220 by the channel controlcircuitry 248 when accessing a LUN 250. From the perspective of thechannel control circuit 248, the DMA access is virtually identical tothe buffer-based access. If “DMA_En” is asserted, the switch 220 canforce the request to the volatile memory 212. The “BARSEL” is used bythe switch 220 to swap a unique “BAR” analogous to the “BAR” addressappended to the buffer tag when it points to a DRAM buffer 227. Forexample, the “BAR” address can be a two-bit address pointing to one offour locations, however embodiments are not so limited. Use of the “BAR”address can allow different simultaneous DMAs.

The non-volatile memory control circuitry 222 can be coupled to theswitch 220. The non-volatile memory control circuitry 222 can be coupledto non-volatile memory devices. FIG. 2 shows the non-volatile memorydevices including a number of LUNs 250. The number of LUNs 250 can becoupled to the non-volatile memory control circuitry 222 by a number ofchannels. In some embodiments, the number of channels can be controlledcollectively by the non-volatile memory control circuitry 222. In anumber of embodiments, each memory channel is coupled to a discretechannel control circuit 248, as illustrated in FIG. 2. A particularchannel control circuit 248 can control and be coupled to more than oneLUN 250 by a single channel. In a number of embodiments, the channelcontrol circuits 248 can be coupled to a plurality of LUNs 250 by anOpen NAND Flash Interface (ONFI) compliant bus.

The non-volatile memory control circuitry 222 includes at least aportion of a command pipeline where commands reside while waiting to beexecuted by a channel control circuit 248. All hardware masters thatinitiate requests to the LUNs 250 can share the same command pipelinethrough the switch 220. For read commands from a host (host reads),there is no control over which LUN 250 is accessed because the hostneeds particular information, which is stored in one or more LUNs 250.Likewise, there is no control over the volume of host traffic. Thecommand pipeline described herein can provide flexibility in hidingprogram time, read time, and erase time conflicts between LUNs 250. Forexample, erase time may be longer than program time or read time. Eachchannel control circuit 248 may be coupled by a plurality of channels toa plurality of LUNs 250. Therefore, while an erase command is beingexecuted by a particular channel control circuit 248 for a particularLUN, the particular channel control circuit 248 may execute anothercommand for a different LUN 250 on the same channel.

The non-volatile memory control circuitry 222 can include a channelrequest queue (CRQ) 242 coupled to each of the channel control circuits248. Each channel control circuit 248 can include a LUN request queue(LRQ) 244 coupled to a plurality of LUN command queues (LCQs) 246. TheLRQ 244 can be an L-number-deep queue circuit, where L is equal to anumber of LUNs 250 per channel control circuit 248. The CRQ 242 can be aC-number-deep queue circuit, where C is equal to, for example, x*(theplurality of channel control circuits 248), where x is a whole number,e.g., 4. For example, the non-volatile memory control circuitry 222 caninclude 32 channels with 16 LUNs per channel, one 128-deep CRQ 242configured to store up to 128 entries for command storage shared betweenchannels, one 16-deep LRQ 244 per channel configured to store up to 16commands between the LUNs 250 on a particular channel, and a 2-deep LCQ246 per channel, where the LCQ 246 is a first-in-first-out (FIFO)circuit. For example, the 2-deep FIFO can be configured to queue acurrent command and a next command to be executed subsequent to thecurrent command. Such embodiments provide (512 LUNs*2-deep LCQ) for 1024entries, plus (one 16-deep LRQ per channel*32 channels) for 512 entries,plus (one 128-deep CRQ) for a total of (1024+512+128)=1664 commandstorage entries. As described herein, such a command pipeline structurecan provide the same performance as 524,288 command storage entries (32LUNs per channel*16 channels*1024-deep FIFO per LUN=524,288) at afraction of the size.

The CRQ 242 can be configured to receive a command from the switch 220and relay the command to one of the LRQs 244, e.g., the LRQ 244associated with the channel that is associated with the particular LUN250 for which the command is targeted. The LRQ 244 can be configured torelay a first plurality of commands for a particular LUN 250 to the LCQ246 associated with the particular LUN 250 in an order that the firstplurality of commands were received by the LRQ 244. The command pipelineis structured such that commands to a same LUN 250 move in order, e.g.,in the order that they were received by the LRQ 244. The LRQ 244 can beconfigured to queue a command for a particular LUN 250 in response tothe LCQ 246 associated with the particular LUN 250 being full and theCRQ 242 can be configured to queue a command for a particular LRQ 244 inresponse to the particular LRQ 244 being full.

The LRQ 244 can be configured to relay a second plurality of commandsfor different LUNs 250 to the LCQs 246 associated with the differentLUNs 250 in an order according to a status of the different LUNs 250.For example, the status of the different LUNs 250 can be a ready/busystatus. The command pipeline is structured such that the commandsbetween different LUNs 250 can move out of order, e.g., in an orderdifferent from the order in which they were received by the LRQ 244according to what is efficient for overall memory operation at the time.For example, the LRQ 244 can be configured to relay a first one of thesecond plurality of commands to a first LCQ 246 before relaying thesecond one of the second plurality of commands to a second LCQ 246 inresponse to the status of the different LUN 250 associated with thesecond LCQ 246 being busy, where the first one of the second pluralityof commands is received later in time than the second one of the secondplurality of commands. The LRQ 244 can be configured to relay the secondone of the second plurality of commands to the second LCQ 246 inresponse to the status of the LUN 250 associated with the second LCQ 246being ready, e.g., subsequent to relaying the first one of the secondplurality of commands.

A number of embodiments including discrete non-volatile memory channelcontrol circuits for each channel can include discrete errordetection/correction circuitry 232, e.g., error correction code (ECC)circuitry, coupled to each channel control circuit 248 and/or a numberof error detection/correction circuits 232 that can be used with morethan one channel. The error detection/correction circuitry 232 can beconfigured to apply error correction such as BCH error correction, aswill be understood by one of ordinary skill in the art, to detect and/orcorrect errors associated with information stored in the LUNs 250. Forexample, the error detection/correction circuitry can provide 29 bits oferror correction over a 1080-bit code word. The errordetection/correction circuitry 232 can be configured to providediffering error correction schemes for single and/or multi level cell(SLC/MLC) operation.

The volatile memory control circuitry 224 can be coupled to the switch220 and to the volatile memory 212, e.g., a number of volatile memorydevices. Among other information, the number of volatile memory devicescan store an LBA table and/or a block table as described in more detailwith respect to FIG. 4.

FIG. 3A is a functional block diagram of a transport layer interfacebetween a host bus adapter (HBA) 334 and a serial attachment (SA)programming compliant device 336 in accordance with a number ofembodiments of the present disclosure. The HBA 334 can be analogous toHBA 234 illustrated in FIG. 2. The SA programming compliant device 336can be analogous to the SA programming compliant device 236 illustratedin FIG. 2. In a number of embodiments, the SA programming compliantdevice 336 can be a serial advanced technology (SATA) programmingcompliant device. In a number of embodiments, the SA programmingcompliant device 336 can be a serial attachment SCSI (SAS) programmingcompliant device.

SA protocols are conceptually defined using layers. In order from low tohigh, for SATA, these include the physical layer, the link layer, thetransport layer, and the command layer. In order from low to high, forSAS, these include the physical layer, the PHY layer, the link layer,the port layer, the transport layer, and the application layer. Commandlayer and/or application layer information can be communicated on thetransport layer by breaking commands up into frame informationstructures (FISes). According to some previous approaches, FISes werecommunicated on the link layer using primitives. Primitives werecommunicated on the physical layer using codewords, which weretransmitted on a SATA or SAS cable using 8b10b encoding. Communicationon the SATA or SAS cable consisted of two differential pairs of wiresreferenced from the host's perspective as transmit (Tx) and receive(Rx). These wires could transmit either commands or information, andwere arbitrated for control. One limitation of this scheme is that oncea communication is arbitrated on the cable, it is the only communicationthat occurs. That is, SATA or SAS is only capable of transmitting asingle FIS at a given time.

If the HBA 334—SA programming compliant device 336 interface is entirelywithin the controller, e.g., as in the case of the solid state memorysystem controller 208 illustrated in FIG. 2, information flow is freefrom the constraints of a cable-connected SA physical layer. A number ofembodiments of the present disclosure abandon use of the physical andlink layers while preserving usage of the FISes and commands supportedby the command layer 352 and the transport layer 354. Concurrency can beachieved by defining physical communication as four sets input/outputs,e.g., command (Cmd), response (Rsp), write data (WrData), and read data(RdData). Thus, by employing a function-specific interconnect, conflictsno longer exist between commands, responses, and information delivery.They can be pipelined and operate concurrently. That is, thefunction-specific interconnect can be configured to simultaneouslytransfer a command, a response, and information between the HBA 334 andthe SA programming compliant device 336. The function-specificinterconnect can include: a Cmd output on the HBA 334 coupled to a Cmdinput on the SA programming compliant device 336, a Rsp output on the SAprogramming compliant device 336 coupled to a Rsp input on the HBA 334,a WrData output on the HBA 334 coupled to a WrData input on the SAprogramming compliant device 336, and a RdData output on the SAprogramming compliant device 336 coupled to a RdData input on the HBA334. In a number of embodiments, each of the Cmd, Rsp, WrData, andRdData input/output pairs can be unidirectional and employ neither 8b10bencoding nor primitives.

The function-specific interconnect can be configured to operate acommand interface (the Cmd output on the HBA 334 and the Cmd input onthe SA programming compliant device 336), a response interface (the Rspinput on the HBA 334 and the Rsp output on the SA programming compliantdevice 336), and an information interface (the WrData output on the HBA334 and the WrData input on the SA programming compliant device 336and/or the RdData input on the HBA 334 and the RdData output on the SAprogramming compliant device 336) concurrently in response to a firstcommand protocol, e.g., native command queuing (NCQ) and/or taggedcommand queuing (TCQ), among others. The function-specific interconnectcan be configured to operate the command interface, response interface,and the information interface atomically in response to a second commandprotocol, e.g., NonData, programmed input/output (PIO), and/or directmemory access (DMA), among others.

The command interface can be used to deliver host-device (HD) FISes fromthe HBA 334 to the SA programming compliant device 336. The WrDataoutput on the HBA 334 can be used to deliver information to the WrDatainput on the SA programming compliant device 336. The RdData output onthe SA programming compliant device 336 can be used to deliverinformation to the RdData input on the HBA 334. The response interfacecan be used to qualify information delivery, e.g., using PIOSetups,DMAActivates, DMASetups, etc., and communicate completions, e.g.,device-host (DH) and/or set device bits (SDB), etc. Qualifyinginformation delivery can include defining an order in which informationis delivered. The use of buffering can allow the movement of informationto begin prior to the corresponding response FIS.

FIG. 3B is a functional block diagram of an HBA 334 and an SAprogramming compliant device 336 in accordance with a number ofembodiments of the present disclosure. The HBA 334 can be analogous toHBA 234 illustrated in FIG. 3A, with more detail shown. The SAprogramming compliant device 336 can be analogous to the SA programmingcompliant device 236 illustrated in FIG. 3A, with more detail shown.

The HBA 334 can include a command fetcher 356 providing the Cmd outputto the SA programming compliant device 336. The HBA 334 can include aresponse receiver 358 receiving the Rsp input from the SA programmingcompliant device 336. The HBA 334 can include a downstream DMA device360 providing the WrData output to the SA programming compliant device336. The HBA 334 can include an upstream DMA device 362 receiving theRdData input from the SA programming compliant device 336. Each of theCmd fetcher 356, the Rsp receiver 358, the downstream DMA 360, and theupstream DMA 362 can be hardware components that can operateindependently of each other, but, in a number of embodiments, cansynchronize operation with the HBA FSM 372, e.g., an advanced hostcontroller interface (AHCI) state machine so that AHCI protocol can beenforced.

The downstream DMA device 360 and the Cmd fetcher 356 can be coupled toa bus interface (I/F) 364 for downstream writes and/or upstream reads.The bus I/F 364 can be configured to receive requests from the Cmdfetcher 356, pass along the requests to the PCIe I/F, e.g., an interfacewith PCIe circuit 230 illustrated in FIG. 2, and return replies to theCmd fetcher 356 when appropriate. The bus I/F 364 can also be configuredto receive information from the PCIe I/F and send requests, e.g., writeinformation fetches, thereto. The downstream DMA device 360 can beconfigured to pipeline multiple PCIe read requests via the Bus I/F 364when adequate buffering exists to receive the write information. Eachrequest sent via the Bus I/F 364 to the PCIe I/F can cause assignment ofa rotating buffer tag that directs information from the PCIe I/F to therespective write buffer. Information can then be removed from the writebuffers in a rotating fashion to be sent to the SA programming compliantdevice 336. The Rsp receiver 358 and the upstream DMA device 362 can becoupled to a bus I/F 366 for downstream reads and/or upstream writes.The bus I/F 366 can be configured to transmit information and/orrequests via the PCIe I/F.

The HBA 334 architecture can present a single AHCI port to host devicedriver software, but can extend the number of command slots within theport, e.g., to 256. Proprietary host device drivers can access the slotsby control registers 370, e.g., eight 32-bit command-issue registers.The control registers 370 may be connected to the PCIe I/F via controlinterfaces 368 for input of write control information and output of readcontrol information. In a number of embodiments, the Cmd fetcher 356 canretrieve and forward commands to the SA programming compliant device 336in an order that the commands are issued. A number of commands, e.g., 32commands, can be received simultaneously within the control registers370 and enqueued for the Cmd fetcher 356.

The number of command slots can be grouped into command slot groups andhave a message signaled interrupt (MSI), e.g., MSI-X, vector assignedthereto. Such embodiments can be beneficial versus some previousapproaches that include 32b AHCI registers for commands for multipleports. A number of embodiments of the present disclosure include oneport with 256b registers for commands, which can make command groupingwith MSI vectors advantageous, such as to improve a likelihood thatinterrupt performance can be optimized in the host, e.g., host 102illustrated in FIG. 1.

The HBA 334 can use context arrays for NCQ reads to be returned in aninterleaved fashion. The information within a particular read commandprocesses in order, however portions of multiple outstanding readcommands may be interleaved with each other. When a read context isinitiated by the SA programming compliant device 336, the HBA 334 canretrieve a record of the current status of the read command from thecontext arrays and continue from the point it was last discontinued.When the read context is completed, the HBA 334 can store the updatedcommand progress values in the context arrays. A context array locationcan exist for each possible outstanding read command, e.g., 256outstanding read commands. An analogous context array may be used forwrites.

The SA programming compliant device 336 can include a command finitestate machine (FSM) 374 receiving the Cmd input from the HBA 334, e.g.,the command fetcher 356 of the HBA 334. The SA programming compliantdevice 336 can include a device-host arbiter (DH ARB) 376 providing theRsp output to the HBA 334, e.g., the response receiver 358 of the HBA334. The SA programming compliant device 336 can include a write FSM 378receiving the WrData input from the HBA 334, e.g., the downstream DMA360 of the HBA 334. The SA programming compliant device 336 can includea read FSM 380 providing the RdData output to the HBA 334, e.g., theupstream DMA 362 of the HBA 334. The Wr FSM 378 can provide an output tomemory, and the Rd FSM 380 can provide an input from memory, e.g., viathe host-memory translation circuitry 216 illustrated in FIG. 2.

The DH ARB 376 can have an input from the Cmd FSM 374, e.g., forcommunication of DHs, SDBs, etc. The DH ARB 376 can include an inputfrom the Wr FSM 378, e.g., for write DMASetups. The DH ARB 376 caninclude an input from the Rd FSM 380, e.g., for read DMASetups. The DHARB 376 can be configured to qualify an order of information deliveryand communicate completions to the HBA 334 based on the input from theCmd FSM 374, the Wr FSM 378, and the Rd FSM 380. The Wr FSM 378 caninclude a write buffer configured to buffer write information before theDH ARB 376 qualifies the order of write information delivery. The Rd FSM380 can include a read buffer configured to buffer read informationbefore the DH ARB 376 qualifies the order of read information delivery.

In a number of embodiments, the Cmd FSM 374 can be configured to operateconcurrently by default. The Cmd FSM 374 can be configured to operateatomically, e.g., in “CurrencyDisabled” mode, in response to detectionof a single-context command protocol such as PIO or DMA. When operatingatomically, the Cmd FSM 374 can be configured to assert one of two“PassControl” signals, one to the Wr FSM 378 and one to the Rd FSM 380.Subsequently, the Cmd FSM 374 can enter a “WaitForCtl” state until areset command is received or a “RetrunControl” signal is asserted fromeither the Wr FSM 378 or the Rd FSM 380. If the detected protocol isNonData, then neither PassControl signal is asserted. The Cmd FSM 374can service the command itself and return to idle upon completion. Iflogic indicates that command tags are ready to be retired, the Cmd FSMcan generate an appropriate SDB FIS and return to idle.

In a number of embodiments, the Wr FSM 378 and the Rd FSM 380 can beconfigured to operate concurrently by default. The Wr FSM 378 and the RdFSM 380 can be configured to operate atomically on receipt of thePassControl signal from the Cmd FSM 374 and/or detection of asingle-context command protocol such as PIO or DMA. The Wr FSM 378and/or the Rd FSM 380 can operate atomically following the SA protocol,e.g., SATA protocol or SAS protocol, until either a command count iscompleted or an error condition is met, in which case the respective FSMcan assert its RtnCtl signal, which can release the Cmd FSM 374 from itsWaitForCtl state. Conversely, concurrent operation allows each FSM tomove information independently.

FIG. 4 illustrates a functional block diagram of a block managementdevice 440 in accordance with a number of embodiments of the presentdisclosure. The block management device 440 can be analogous to theblock management device 240 illustrated in FIG. 2 and can be included inmemory management circuitry. The block management device 440 cancommunicate with volatile memory 412, e.g., DRAM, which can be analogousto the volatile memory 212 illustrated in FIG. 2. Thus, for example, theblock management device 440 can communicate with the volatile memory 412via a switch and volatile memory control circuitry. The volatile memory412 can store a logical block address (LBA) table 482, a block table484, and/or a transaction log 486, among other information.

The LBA table 482 can store the physical page address of pages in theLUNs, e.g., LUNs 250 illustrated in FIG. 2, and include correspondinglogical addresses. That is, the LBA table 482 can store logical tophysical and/or physical to logical address translations. Thus, the LBAtable 482 can be used to look-up physical page addresses that correspondto logical block addresses where corresponding information can bestored. The LBA table 482 can be indexed by the LBA that is contained inan associated SA command. The block table 484 can store information forerasable blocks in the number of LUNs. Information stored in the blocktable 484 can include valid page information, erase count, and otherhealth and/or status information. Information accessed from the blocktable 484 can be indexed by physical block address. The transaction log486 can be used to record information about writes that occur in theLUNs. In a number of embodiments, the transaction log 486 can be updatedcontemporaneously with the writes to the LUNs. The transaction log 486can include information about writes to the LUNs that have occurredsince the last time that the LBA table 482 was saved in the non-volatilememory, e.g., in order to facilitate recreation of portions of the LBAtable 482 that may be lost due to sudden power loss or other errorsbetween updates of the LBA table 482 to the non-volatile memory.

Some of the objects depicted within the block management device 440 areindicative of the functionality provided by the block management device440. The LBA table lookup function 490 can reference the LBA table 482in the volatile memory 412 to perform logical to physical addresstranslation. The LBA table lookup function 490 can update the LBA table482 with a new physical address corresponding to a logical address wheninformation associated with the logical address is updated. The blocktable lookup function 491 can reference the block table 484 in thevolatile memory 412, e.g., to determine candidates for wear levelingsuch as reclamation and/or garbage collection. Reclamation can involvemoving all valid pages from a block to be erased to new locations beforethe block is erased. The block reclamation function 493 can referencethe transaction log 486 in the volatile memory 412.

The block array 492 stored in local memory of the memory managementcircuitry, e.g., block management device 440, can track reclamation pagecandidates 494, erase block candidates 495, reclamation write blockcandidates 496, and/or host write block candidates 497, e.g., asreferenced to the block array 492 by the LBA table lookup function 490and/or the block table lookup function 491. Such candidates can beselected for each LUN in the system using dedicated hardware to analyzethe health and/or status information of each block as it is read orwritten to the volatile memory 412, e.g., DRAM, at volatile memoryspeed. The current candidates for each LUN can be stored in the blockarray 492. Each time the block table 484 is accessed, a pipelinedstructure can retrieve the current best candidate from the block array492 and compare it to the new block table 484 access. If the new blocktable 484 access, e.g., as a result of a write, erase, or error event,reveals a better candidate than the current candidate stored in theblock array 492, then the new block can replace that candidate in theblock array 492. Candidate selection can occur without stalling accessto the volatile memory 412, which allows the process to proceed atvolatile memory 412 speed using the pipelined structure.

The block management device 440 can be configured to store health andstatus information for each of a plurality of blocks in a block table484 in the volatile memory 412. The block management device 440 can beconfigured to store a candidate block table, e.g., block array 492including reclamation page candidates 494, erase block candidates 495,reclamation write block candidates 496, and/or host write blockcandidates 497, in the local memory. The candidate block table canidentify a candidate block for a particular operation, e.g., a hostwrite, a reclamation read, a reclamation write, and/or an erase, basedon a number of criteria for the particular operation. The blockmanagement device 440 can be configured to update the health and statusinformation for a particular block in the block table 484, e.g., inresponse to a write, an erase, or an error event for the particularblock. The block management device 440 can be configured to compare theupdated health and status information for the particular block with thecandidate block according to the number of criteria. The blockmanagement device 440 can be configured to update the candidate blocktable to identify the particular block at least partially in response tothe comparison indicating that the particular block better satisfies thenumber of criteria, e.g., on a same clock cycle during which the healthand status information for the particular block is updated in thevolatile memory 412.

The candidate selection process described above can be supplemented witha table walking process that does not rely on a new block table 484access as a result of a write, erase, or error event, for example. Thetable walking process can recover the history of block information thatis not stored locally in the block array 492 in the block managementdevice 440. Table walking can be a slower background process relative toblock table 484 accesses as a result of a write, erase, or error event.Once the entire block table 484 has been walked, the table walkingprocess may be ceased, e.g., to reduce volatile memory 412 powerconsumption. In some instances, a new block table 484 access canreinitiate the table walking process. Thus, the block management device440 can be configured to compare the updated health and statusinformation for each of the plurality of blocks in the block table 484in the volatile memory 412 with the candidate block according to thenumber of criteria independent of a write, an erase, or an error eventfor any of the plurality of blocks. The comparison of the blocks can beceased after each of the plurality of blocks has been compared.

In a number of embodiments of the present disclosure, host operationsare not stalled during a reclamation process according to the use of acoherency point to update the LBA table 482. During a reclamationprocess, a reclamation page candidate, e.g., from reclamation pagecandidates 494, is read from a first location and written to a secondlocation. During this read and write, the host may have written newinformation to the LBA currently being processed for reclamation andupdated the LBA table 482 with a new physical address. When thereclamation has finished the page read and write, the LBA table 482 canbe updated with the new physical address only if the LBA table 482 entryfor the LBA under reclamation has the same physical address as theinformation read from the first location, e.g., if the host has notupdated the entry in the LBA table 482. The page corresponding to thereclamation read can be marked as invalid, e.g., storing staleinformation, in the block table 484. If the physical address isdifferent than the address corresponding to the reclamation read, thatindicates that the host has made an update, and the LBA table will notbe updated with the new physical address per the reclamation write. Thereclamation write can be invalidated in the block table 484 to indicatethat the physical location corresponding to the reclamation write storesinvalid information.

The memory management circuitry, e.g., the block management device 440,can be configured to retrieve a first physical address corresponding toa logical address for a particular block from the block table 484 priorto information being read from the particular block during a reclamationoperation on the particular block. The block management device 440 canbe configured to retrieve a second physical address corresponding to thelogical address from the LBA table 482 after the information is writtento a different block during the reclamation operation. The blockmanagement device 440 can be configured to update the LBA table 482 witha third physical address corresponding to the different block at leastpartially in response to the second physical address being equal to thefirst physical address. The block management device 440 can beconfigured to invalidate the reclamation operation at least partially inresponse to the second physical address being different than the firstphysical address.

The block management device 440 can be coupled between a host commandqueue 498 and a memory command queue 499. The host command queue 498 canbe associated with a host, such as host 102 illustrated in FIG. 1, SA tomemory circuitry 238 as illustrated in FIG. 2, and/or a number ofcomponents of the host interface 214 illustrated in FIG. 2. The memorycommand queue 499 can be analogous to one or more of the CRQ 242, LRQ244, and LCQs 246 illustrated in FIG. 2, and/or other components.

Memory management circuitry, e.g., the block management device 440, canbe coupled to non-volatile memory control circuitry, e.g., non-volatilememory control circuitry 222 illustrated in FIG. 2 via a switch, e.g.,switch 220 illustrated in FIG. 2. The memory management circuitry can beconfigured to allocate a write block cluster for host writes based on aninformation width of a host bus and a protocol of the host bus. A writeblock cluster can include a number of blocks from a number of LUNs 250.The host bus can be part of a host, e.g., host 102 illustrated inFIG. 1. For example, the host bus can be a PCIe bus with bus widths ofx1, x2, x4, x8, x16, x32, etc., and protocols of PCIe generations 1-3,among others. The write block cluster can include one block from fewerthan all of the LUNs that are coupled to a plurality of channel controlcircuits in the non-volatile memory control circuitry. In a number ofembodiments, the memory management circuitry can be configured to limitthe size of the write block cluster to a minimum number of the LUNs usedto support a maximum host bus bandwidth according to the informationwidth of the host bus and the protocol of the host bus.

The write bandwidth of the memory system controller can be a function ofthe maximum bandwidth supported by the host bus, the number of memorychannels in the system, and the number of LUNs per channel. Allocatingmore LUNs than the host bus can support may be a waste of resources thatcould otherwise be used for reclamation operations. Thus, according to anumber of embodiments of the present disclosure, the host write blockcluster size can be limited to something less than the total number ofLUNs in the memory system.

A remainder of blocks from the LUNs, e.g., those not allocated to thewrite block cluster, can be allocated for reclamation operations. Memorymanagement circuitry can be configured to temporarily deallocate anumber of the allocated LUNs from reclamation operations. The writeblock cluster can be allocated for host writes such that blocks of thewrite block cluster are written in a particular sequence of LUNs.Reclamation bandwidth may be limited to improve the write bandwidth ofthe memory system controller by suspending reclamation operations toLUNs that may be used for writes in the near future. At least one of theallocated LUNs can be deallocated from reclamation operations at leastpartially in response to the particular sequence of LUNs indicating thatthe LUN is within a threshold number of LUNs of being next in theparticular sequence of LUNs for a host write. The threshold number canbe different for each of a reclamation read operation, a reclamationwrite operation, and a reclamation erase operation. The threshold numbercan represent an “exclusion zone” that is a number of LUNs where noreclamation operations may occur prior to a write operation.

Using multiple LUNs per channel can lead to situations where morecommands are issued than a particular channel can handle, leading to thecommands being queued with respect to the memory channel, e.g., asdescribed with respect to the CRQ 242, LRQ 244, and LCQs 246 in FIG. 2.The memory management circuitry can be configured to limit a number ofcommands issued for reclamation operations to a particular LUN at leastpartially in response to the number of queues associated with theparticular LUN being within a threshold of being full. The maximumnumber of commands per channel may also be limited to stay within adesired power envelope. The number of commands issued for reclamationoperations can be limited at least partially in response to an amount ofpower caused to be used by the memory system controller exceeding athreshold amount of power. The maximum number of commands per channelmay also be limited, for example in order to help ensure thatback-to-back commands for a same channel and/or LUN are spaced apartsufficiently for efficient operation. The memory management circuitrycan be configured to enforce at least a minimum time, e.g., number ofclocks, between issuance of a first command and a second command forreclamation operations. The minimum time can be based on a total numberof erased blocks in the LUNs, e.g., because reclamation bandwidth canincrease as the number of erased blocks decreases.

Maximum host write bandwidth can be maintained in the short-term ifthere is an adequate supply of erased blocks available. Once the supplyof erased blocks is nearly consumed, write bandwidth can decrease due toincreased reclamation operations. The memory management circuitry can beconfigured to track a number of erased blocks for reach of the LUNs,e.g., with reference to the block table 484. The memory managementcircuitry can be configured to engage reclamation operations for aparticular LUN at least partially in response to the number of erasedblocks in the particular LUN exceeding a reclamation threshold number,e.g., falling below the threshold number. The memory managementcircuitry can be configured to suspend reclamation operations for aparticular LUN at least partially in response to the number of erasedblocks in the particular LUN exceeding a reclamation threshold number,e.g., going over the threshold number. Host writes can be suspended forthe particular LUN at least partially in response to the number oferased blocks in the particular LUN falling below a host write thresholdnumber. The memory management circuitry can be configured to suspendwrites to a particular LUN at least partially in response to the numberof erased blocks in the particular LUN exceeding a write thresholdnumber, e.g., falling below the threshold number. The memory managementcircuitry can be configured to re-engage writes to a particular LUN atleast partially in response to the number of erased blocks in theparticular LUN exceeding a reclamation threshold number, e.g., goingover the threshold number. Such embodiments can help provide anequilibrium between reclamation operations and write operations, e.g.,dynamic load balancing.

Some memory operations have long durations. The channel controlcircuits, e.g., channel control circuits 248 illustrated in FIG. 2 caninclude polling logic configured to issue a status read to the LUNs,e.g., to determine when a particular memory operation is complete. Insome instances, such polling can interfere with other commands using thesame channel as a LUN being polled. According to a number of embodimentsof the present disclosure, the polling logic can be idled for aparticular time according to a type of operation indicated by a commandissued to a LUN. The idle time can be set for specific operations, e.g.,according to a time that the particular operation is expected to take,such as a read, a write, and/or an erase operation, among others.

CONCLUSION

The present disclosure includes examples of various apparatus, includingmemory system controllers. One such memory system controller can includea switch and non-volatile memory control circuitry coupled to theswitch. The non-volatile memory control circuitry can include a channelcontrol circuit coupled to logical units. The channel control circuitrycan be configured to relay an erase command to a first one of thelogical units and relay a particular command from the switch to a secondone of the logical units while the erase command is being executed onthe first one of the plurality of logical units.

It will be understood that when an element is referred to as being “on,”“connected to” or “coupled with” another element, it can be directly on,connected, or coupled with the other element or intervening elements maybe present. In contrast, when an element is referred to as being“directly on,” “directly connected to” or “directly coupled with”another element, there are no intervening elements or layers present. Asused herein, the term “and/or” includes any and all combinations of anumber of the associated listed items.

As used herein, the term “and/or” includes any and all combinations of anumber of the associated listed items. As used herein the term “or,”unless otherwise noted, means logically inclusive or. That is, “A or B”can include (only A), (only B), or (both A and B). In other words, “A orB” can mean “A and/or B” or “one or more of A and B.”

It will be understood that, although the terms first, second, third,etc. may be used herein to describe various elements, these elementsshould not be limited by these terms. These terms are only used todistinguish one element from another element. Thus, a first elementcould be termed a second element without departing from the teachings ofthe present disclosure.

Although specific embodiments have been illustrated and describedherein, those of ordinary skill in the art will appreciate that anarrangement calculated to achieve the same results can be substitutedfor the specific embodiments shown. This disclosure is intended to coveradaptations or variations of a number of embodiments of the presentdisclosure. It is to be understood that the above description has beenmade in an illustrative fashion, and not a restrictive one. Combinationof the above embodiments, and other embodiments not specificallydescribed herein will be apparent to those of skill in the art uponreviewing the above description. The scope of the number of embodimentsof the present disclosure includes other applications in which the abovestructures and methods are used. Therefore, the scope of a number ofembodiments of the present disclosure should be determined withreference to the appended claims, along with the full range ofequivalents to which such claims are entitled.

In the foregoing Detailed Description, some features are groupedtogether in a single embodiment for the purpose of streamlining thedisclosure. This method of disclosure is not to be interpreted asreflecting an intention that the disclosed embodiments of the presentdisclosure have to use more features than are expressly recited in eachclaim. Rather, as the following claims reflect, inventive subject matterlies in less than all features of a single disclosed embodiment. Thus,the following claims are hereby incorporated into the DetailedDescription, with each claim standing on its own as a separateembodiment.

1. An apparatus, comprising: a switch; and non-volatile memory controlcircuitry coupled to the switch, wherein the non-volatile memory controlcircuitry includes a channel control circuit coupled to a plurality oflogical units, wherein the channel control circuitry is configured to:relay an erase command to a first one of the plurality of logical units;and relay a particular command from the switch to a second one of theplurality of logical units while the erase command is being executed onthe first one of the plurality of logical units.
 2. The apparatus ofclaim 1, wherein the channel control circuit includes: a plurality oflogical unit command queues (LCQs); and a logical unit request queue(LRQ) coupled to the plurality of LCQs, wherein the LRQ is configuredto: relay a first plurality of commands for a particular one of theplurality of logical units to one of the plurality of LCQs associatedwith the particular one of the plurality of logical units in an orderthat the first plurality of commands were received; and relay a secondplurality of commands for different ones of the plurality of logicalunits to those of the LCQs associated with the different ones of theplurality of logical units in an order according to a status of thedifferent logical units.
 3. The apparatus of claim 2, wherein thenon-volatile memory control circuitry includes: a plurality of channelcontrol circuits, each coupled to a separate plurality of logical units;and a channel request queue (CRQ) coupled to the plurality of channelcontrol circuits, wherein the CRQ is configured to receive a commandfrom the switch and relay the command to one of the LRQs.
 4. Theapparatus of claim 2, wherein the LRQ is configured to relay the erasecommand to a first one of the plurality of LCQs associated with thefirst one of the plurality of logical units and to relay the particularcommand to a second one of the plurality of LCQs associated with thesecond one of the plurality of logical units.
 5. The apparatus of claim1, wherein the particular command is one of a read command and a writecommand.
 6. A method, comprising: relaying an erase command via achannel control circuit to a first one of a plurality of logical units;and relaying a particular command via the channel control circuit to asecond one of the plurality of logical units while the erase command isbeing executed on the first one of the plurality of logical units. 7.The method of claim 6, wherein the method includes: relaying a firstplurality of commands for a particular one of the plurality of logicalunits to one of the plurality of LCQs associated with the particular oneof the plurality of logical units in an order that the first pluralityof commands were received; and relaying a second plurality of commandsfor different ones of the plurality of logical unitss to those of theLCQs associated with the different ones of the plurality of logicalunits in an order according to a status of the different logical units.8. The method of claim 6, wherein the method includes relaying the erasecommand from memory management circuitry.
 9. The method of claim 8,wherein the method includes receiving the particular command from ahost.
 10. A method, comprising: relaying a first plurality of commandsfor a particular logical unit via a logical unit request queue (LRQ) toone of a plurality of logical unit command queues (LCQs) associated withthe particular logical unit in an order that the first plurality ofcommands were received; and relaying a second plurality of commands fordifferent logical units via the LRQ to those of the plurality of LCQsassociated with the different logical units in an order according to astatus of the different logical units.
 11. The method of claim 10,wherein the method includes: receiving the first plurality of commandsfrom a switch at a channel request queue (CRQ) and relaying the firstplurality of commands to the LRQ; and receiving the second plurality ofcommands from the switch at the CRQ and relaying the second plurality ofcommands to the LRQ.
 12. The method of claim 10, wherein the status ofthe different logical units is a ready/busy status, and wherein themethod includes: relaying a first one of the second plurality ofcommands to a first LCQ before relaying the second one of the secondplurality of commands to a second LCQ in response to the status of thedifferent logical unit associated with the second LCQ being busy,wherein the first one of the second plurality of commands is receivedlater in time than the second one of the second plurality of commands.relaying the second one of the second plurality of commands to thesecond LCQ in response to the status of the associated different logicalunit being ready.
 13. An apparatus, comprising: a switch; andnon-volatile memory control circuitry coupled to the switch, wherein thenon-volatile memory control circuitry includes: a plurality of channelcontrol circuits, wherein each of the plurality of channel controlcircuits include: a plurality of logical unit command queues (LCQs); anda logical unit request queue (LRQ) coupled to the plurality of LCQs,wherein the LRQ is configured to: relay a first plurality of commandsfor a particular logical unit to one of the plurality of LCQs associatedwith the particular logical unit in an order that the first plurality ofcommands were received; and relay a second plurality of commands fordifferent logical units to those of the LCQs associated with thedifferent logical units in an order according to a status of thedifferent logical units; and a channel request queue (CRQ) coupled tothe plurality of channel control circuits, wherein the CRQ is configuredto receive a command from the switch and relay the command to one of theLRQs.
 14. The apparatus of claim 13, wherein: the status of thedifferent logical units is a ready/busy status of the different logicalunits; and the LRQ is configured to relay a first one of the secondplurality of commands to a first LCQ before relaying the second one ofthe second plurality of commands to a second LCQ in response to thestatus of the different logical unit associated with the second LCQbeing busy, wherein the first one of the second plurality of commands isreceived later in time than the second one of the second plurality ofcommands.
 15. The apparatus of claim 14, wherein the LRQ is configuredto relay the second one of the second plurality of commands to thesecond LCQ in response to the status of the associated different logicalunit being ready.
 16. The apparatus of claim 13, wherein: the LRQ isconfigured to queue a command for a particular logical unit in responseto the LCQ associated with the particular logical unit being full; andthe CRQ is configured to queue a command for a particular LRQ inresponse to the particular LRQ being full.
 17. The apparatus controllerof claim 13, wherein each channel control circuit is configured to becoupled to a plurality of logical units by an Open NAND Flash Interface(ONFI) compliant bus.
 18. The apparatus of claim 13, wherein each of theplurality of LCQs comprises a 2-deep first-in-first-out (FIFO) circuitconfigured to queue a current command and a next command to be executedsubsequent to the current command, and wherein each of the plurality ofLCQs is configured to be coupled to a different logical unit.
 19. Theapparatus of claim 13, wherein the LRQ comprises an L-number-deep queuecircuit, where L is equal to a number of logical units per channelcontrol circuit.
 20. The apparatus of claim 13, wherein the CRQcomprises a C-number-deep queue circuit, where C is equal to x*(theplurality of channel control circuits), where x is a whole number.